Semiconductor device including an electrode lower layer and an electrode upper layer and method of manufacturing semiconductor device

ABSTRACT

The semiconductor device according to the present invention includes a ferroelectric film and an electrode stacked on the ferroelectric film. The electrode has a multilayer structure of an electrode lower layer in contact with the ferroelectric film and an electrode upper layer stacked on the electrode lower layer. The electrode upper layer is made of a conductive material having an etching selection ratio with respect to the materials for the ferroelectric film and the electrode lower layer. The upper surface of the electrode upper layer is planarized.

BACKGROUND OF THE INVENTION

1. Field of the Invention

The present invention relates to a semiconductor device employing aferroelectric substance and a method of manufacturing the same.

2. Description of Related Art

A ferroelectric memory (FeRAM: Ferroelectric Random Access Memory)holding data through the hysteresis of a ferroelectric substance isknown as one of nonvolatile memories.

In general, there are two types of ferroelectric memories havingdifferent cell structures. One of the ferroelectric memories has a 1T1Ccell structure including a field-effect transistor for selecting amemory cell and a ferroelectric capacitor, while the other one has a 1Tcell structure including a field-effect transistor having a gateinsulating film made of a ferroelectric substance.

FIG. 3 is a schematic sectional view showing a portion around aferroelectric capacitor of a ferroelectric memory having a 1T1C cellstructure.

The ferroelectric memory includes a silicon substrate (not shown). Afield-effect transistor is formed on the silicon substrate every memorycell. A first interlayer dielectric film 101 made of SiO₂ (siliconoxide) is stacked on the silicon substrate. A ferroelectric capacitor102 is formed on the first interlayer dielectric film 101 every memorycell.

The ferroelectric capacitor 102 has a multilayer structure formed byinterposing a ferroelectric film 105 between a lower electrode 103 andan upper electrode 104. The lower electrode 103 and the upper electrode104 are made of a conductive material containing Ir (iridium). Theferroelectric film 105 is made of PZT (lead zirconate titanate:Pb(Zr,Ti)O₃) .

The ferroelectric capacitor 102 is formed by stacking a multilayer filmmade of the materials for the lower electrode 103, the ferroelectricfilm 105 and the upper electrode 104 on the first interlayer dielectricfilm 101, thereafter forming an etching mask on the multilayer film andetching portions of the multilayer film exposed from the etching mask.Ir and PZT are hard to etch, and hence the ferroelectric capacitor 102has a trapezoidal sectional shape tapered upward.

The surfaces of the first interlayer dielectric film 101 and theferroelectric capacitor 102 are covered with a hydrogen barrier film 106made of Al₂O₃ (alumina). Thus, the ferroelectric film 105 can beprevented from characteristic deterioration resulting from hydrogenreduction.

A second interlayer dielectric film 107 made of SiO₂ is stacked on thehydrogen barrier film 106.

A via hole 108 is formed in the second interlayer dielectric film 107above the ferroelectric capacitor 102. The via hole 108 penetratesthrough the second interlayer dielectric film 107, further penetratesthrough the hydrogen barrier film 106, and reaches the upper electrode104 of the ferroelectric capacitor 102. A barrier metal film 109 made ofTiN (titanium nitride) is formed on the inner surface of the via hole108. A plug (not shown) made of W (tungsten) for electrical connectionbetween the upper electrode 104 and a wire (not shown) is embedded inthe via hole 108 through the barrier metal film 109.

Reduction of the thickness of the ferroelectric film 105 has recentlybeen examined, in order to refine the ferroelectric memory and to reducethe voltage thereof.

Sputtering and a sol-gel process are widely known as methods of forminga film (a PZT film) made of PZT employed as the material for theferroelectric film 105. When a PZT film having a thickness of not morethan 100 nm is formed by sputtering or the sol-gel process, however, thePZT film cannot attain crystallinity capable of exhibiting excellentferroelectricity. Therefore, it is difficult to reduce the thickness ofthe ferroelectric film 105 (the PZT film) to not more than 100 nmaccording to sputtering or the sol-gel process.

MOCVD (Metal Organic Chemical Vapor Deposition) may be employed as afilm forming method capable of reducing the thickness of theferroelectric film 105 while ensuring crystallinity thereof. However, aPZT film formed by MOCVD has large crystal grain sizes and inferiorsurface morphology (has large irregularities formed on the surfacethereof). Therefore, the surface morphology of the upper electrode 104stacked on the ferroelectric film 105 consisting of the PZT film is alsodeteriorated. Consequently, defective coverage (including a state wherethe hydrogen barrier film 106 and/or the barrier metal film 109 has anextremely thin portion) of the hydrogen barrier film 106 or the barriermetal film 109 in contact with the hydrogen barrier film 106 may becaused on the upper electrode 104 (the ferroelectric capacitor 102).Defective coverage of the hydrogen barrier film 106 results incharacteristic deterioration of the ferroelectric film 105. Whendefective coverage of the barrier metal film 109 is caused, the barriermetal film 109 may be peeled or corroded due to reaction between WF₆(tungsten hexafluoride) and SiO₂ forming the second interlayerdielectric film 107 in the process of embedding the plug made oftungsten in the via hole 108 by CVD (Chemical Vapor Deposition).

SUMMARY OF THE INVENTION

An object of the present invention is to provide a semiconductor devicecapable of preventing defective coverage of films on an electrode whenthe films (a hydrogen barrier film and a barrier metal film) are formedon the electrode and a method of manufacturing the same.

A semiconductor device according to an aspect of the present inventionincludes a ferroelectric film and an electrode stacked on theferroelectric film. The electrode having a multilayer structure of anelectrode lower layer in contact with the ferroelectric film and anelectrode upper layer stacked on the electrode lower layer is stacked onthe ferroelectric film. The upper surface of the electrode upper layeris planarized into a planar surface independent of the surfacemorphology of the ferroelectric film. When a film is formed on theelectrode upper layer (the electrode), therefore, the film can be formedwith a generally uniform thickness on the electrode, and defectivecoverage of the film on the electrode can be prevented.

The electrode upper layer is made of a conductive material having anetching selection ratio (etching selectivity) with respect to thematerials for the ferroelectric film and the electrode lower layer.After formation of the electrode upper layer, therefore, the electrodeupper layer can be utilized as an etching mask for forming theferroelectric film and the electrode lower layer. In other words, theferroelectric film and the electrode lower layer can be formed bysuccessively stacking films made of the materials for the ferroelectricfilm, the electrode lower layer and the electrode upper layer,planarizing the film made of the material for the electrode upper layer,thereafter forming the electrode upper layer by patterning the film, andetching the films made of the materials for the ferroelectric film andthe electrode lower layer through the electrode upper layer serving as amask. That is, the etching mask can be left as the electrode upper layeras such by planarizing the etching mask for forming the ferroelectricfilm and the electrode lower layer.

The semiconductor device having the aforementioned structure can bemanufactured by a method including the following steps I to VI:

I. forming a ferroelectric material film made of a ferroelectricmaterial;

II. forming a first conductive material film made of a conductivematerial on the ferroelectric material film;

III. forming a second conductive material film made of a conductivematerial having an etching selection ratio with respect to theferroelectric material and the conductive material on the firstconductive material film;

IV. planarizing the upper surface of the second conductive materialfilm;

V. forming an electrode upper layer consisting of the second conductivematerial film by patterning the second conductive material film afterthe planarization; and

VI. forming a ferroelectric film consisting of the ferroelectricmaterial film and an electrode lower layer consisting of the conductivematerial film by etching the ferroelectric material film and theconductive material film through the electrode upper layer serving as amask.

In order to planarize the upper surface of the electrode, theferroelectric film or the electrode lower layer may conceivably beplanarized. If the ferroelectric film is planarized, however, badinfluence is exerted on the crystallinity thereof, to reduce theferroelectricity. If the electrode lower layer is made of a conductivematerial containing a noble metal such as Ir, it is difficult toplanarize the electrode lower layer.

Therefore, the electrode upper layer is preferably made of TiN, TaN(tantalum nitride) or WN (tungsten nitride). When the electrode upperlayer is made of such a material, the upper surface thereof can beeasily planarized.

The semiconductor device may include a hydrogen barrier film coveringthe surfaces of the ferroelectric film and the electrode. The electrodehas the planar upper surface, whereby defective coverage of the hydrogenbarrier film on the electrode can be prevented. Consequently, thehydrogen barrier film can excellently prevent the ferroelectric filmfrom hydrogen reduction, thereby preventing characteristic deteriorationof the ferroelectric film.

The semiconductor device may further include an insulating film stackedon the hydrogen barrier film, and a plug, made of a metallic material,embedded in a via hole penetrating through the insulating film and thehydrogen barrier film.

When a surface layer portion of the electrode lower layer is made of amaterial such as an IrTa (iridium tantalum) alloy having hydrogenbarrier properties and the via hole penetrates through the surface layerportion of the electrode lower layer, the hydrogen barrier propertiesmay be deteriorated and the characteristics of the ferroelectric filmmay be deteriorated due to penetration of H (hydrogen) from the viahole.

Therefore, the deepest portion of the via hole is preferably arranged onan intermediate portion in the thickness direction of the electrodeupper layer. Thus, hydrogen barrier properties can be ensured with thesurface layer portion of the electrode lower layer when the surfacelayer portion of the electrode lower layer is made of a material such asan IrTa alloy having the hydrogen barrier properties, and theferroelectric film can be prevented from characteristic deteriorationresulting from penetration of H from the via hole.

The semiconductor device may further include a barrier metal filminterposed between the inner surface of the via hole and the plug. Thebarrier metal film can prevent metal diffusion from the plug into theinsulating film. Further, defective coverage of the barrier metal filmon the electrode can be prevented due to the planar upper surface of theelectrode.

Defective coverage of the barrier metal film can be so prevented thatreaction between WF₆ gas and the material for the insulating film can beprevented in the process of embedding the via hole when the plug is madeof tungsten, even if the plug is embedded by CVD. Therefore, the barriermetal film can be prevented from peeling and corrosion.

The semiconductor device including the barrier metal film interposedbetween the inner surface of the via hole and the plug can bemanufactured by a method including the following steps VII to XII inaddition to the steps I to IV:

VII. forming a hydrogen barrier film covering the ferroelectric film,the electrode lower layer and the electrode upper layer;

VIII. forming an insulating film on the hydrogen barrier film;

IX. forming a via hole penetrating through the insulating film and thehydrogen barrier film from the upper surface of the insulating film tobe dug up to an intermediate portion in the thickness direction of theelectrode upper layer;

X. forming a barrier metal material film on the insulating filmincluding the inner surface of the via hole;

XI. forming a plug material layer on the barrier metal material film tofill up the via hole; and

XII. forming a barrier metal film and a plug in the via hole by removingportions of the barrier metal material film and the plug material layerlocated outside the via hole.

The semiconductor device may include a lower electrode opposed to theelectrode through the ferroelectric film. In other words, thesemiconductor device may include a ferroelectric capacitor consisting ofthe ferroelectric film, the electrode and the lower electrode.

The foregoing and other objects, features and effects of the presentinvention will become more apparent from the following detaileddescription of the embodiments with reference to the attached drawings.

BRIEF DESCRIPTION OF THE DRAWINGS

FIG. 1 is a schematic sectional view showing the structure of asemiconductor device according to an embodiment of the presentinvention.

FIGS. 2A to 2K are schematic sectional views successively showing thesteps of manufacturing the semiconductor device.

FIG. 3 is a schematic sectional view showing a portion around aferroelectric capacitor of a conventional semiconductor device(ferroelectric memory).

DETAILED DESCRIPTION OF PREFERRED EMBODIMENTS

FIG. 1 is a schematic sectional view showing the structure of asemiconductor device according to an embodiment of the presentinvention.

A semiconductor device 1 is a ferroelectric memory including a pluralityof memory cells each having a 1T1C cell structure. FIG. 1 shows the cellstructure of one memory cell.

The semiconductor device 1 includes a P-type semiconductor layer 2. Thesemiconductor layer 2 may be a semiconductor substrate such as an Si(silicon) substrate or an SiC (silicon carbide) substrate, or an Silayer or an SiC layer formed by epitaxy or CVD.

Each memory cell includes one MOSFET (Metal Oxide SemiconductorField-Effect Transistor) 3 and one ferroelectric capacitor 4.

The MOSFET 3 is formed on the semiconductor layer 2. In other words, anN-type drain region 5 and an N-type source region 6 are formed on asurface layer portion of the semiconductor layer 2 at an interval fromeach other. A gate insulating film 8 is formed on the semiconductorlayer 2, to be opposed to a channel region 7 between the drain region 5and the source region 6. The gate insulating film 8 is made of SiO₂, forexample. A gate electrode 9 having the same shape as the gate insulatingfilm 8 in plan view is formed on the gate insulating film 8. The gateelectrode 9 is made of doped polysilicon (polysilicon doped with anN-type impurity in a high concentration, for example). Sidewalls 10 areformed on the periphery of the gate electrode 9. The sidewalls 10 coverthe overall peripheries of the side surfaces of the gate insulating film8 and the gate electrode 9. The sidewalls 10 are made of SiN (siliconnitride) or SiO₂, for example.

A first interlayer dielectric film 11 is stacked on the semiconductorlayer 2. The first interlayer dielectric film 11 is made of SiO₂, forexample.

The ferroelectric capacitor 4 is formed on the first interlayerdielectric film 11, on a position at least partially overlapping withthe drain region 5 in plan view. The ferroelectric capacitor 4 has astructure obtained by stacking a lower electrode 12, a ferroelectricfilm 13 and an upper electrode 14 in this order on the first interlayerdielectric film 11. In other words, the ferroelectric capacitor 4 has amultilayer structure obtained by interposing the ferroelectric film 13between the lower electrode 12 and the upper electrode 14 opposedthereto. The ferroelectric capacitor 4 necessarily has a trapezoidalsectional shape tapered upward, due to difficulty in etching for formingthe same.

The lower electrode 12 is made of a conductive material containing anoble metal such as Ir.

The ferroelectric film 13 is made of PZT.

The upper electrode 14 includes an electrode lower layer 15 made of aconductive material containing Ir and an electrode upper layer 16 madeof TiN stacked on the electrode lower layer 15. More specifically, theelectrode lower layer 15 has a structure obtained by stacking an IrO₂(iridium oxide) film, an Ir film and an IrTa alloy film in this order onthe ferroelectric film 13. The IrTa alloy film has hydrogen barrierproperties.

The upper surface of the electrode lower layer 15 has relatively largeirregularities due to inferior surface morphology of the ferroelectricfilm 13. On the other hand, the upper surface of the electrode upperlayer 16 is planarized into a planar surface independent of the surfacemorphology of the ferroelectric film 13.

The surfaces of the ferroelectric capacitor 4 and the first interlayerdielectric film 11 are covered with a hydrogen barrier film 17 forpreventing the ferroelectric film 13 from characteristic deteriorationresulting from hydrogen reduction. The hydrogen barrier film 17 is madeof Al₂O₃, for example.

A second interlayer dielectric film 18 is stacked on the hydrogenbarrier film 17. The second interlayer dielectric film 18 is made ofSiO₂, for example.

A first contact plug 19 electrically connected with the drain region 5and the lower electrode 12 and a second contact plug 20 electricallyconnected with the source region 6 are embedded in the first interlayerdielectric film 11.

More specifically, a first contact hole 21 penetrating through the firstinterlayer dielectric film 11 is formed between the drain region 5 andthe lower electrode 12. A barrier metal film 22 is formed on the sidesurface of the first contact hole 21 and a portion of the drain region 5facing the first contact hole 21. The barrier metal film 22 is made ofTiN, for example. The first contact plug 19 is embedded in the firstcontact hole 21 through the barrier metal film 22. The first contactplug 19 is made of W, for example.

A second contact hole 23 penetrating through the first interlayerdielectric film 11 is formed above the source region 6. A barrier metalfilm 24 is formed on the side surface of the second contact hole 23 anda portion of the source region 6 facing the second contact hole 23. Thebarrier metal film 24 is made of the same material as the barrier metalfilm 22. The second contact plug 20 is embedded in the second contacthole 23 through the barrier metal film 24. The second contact plug 20 ismade of the same material as the first contact plug 19.

A first via plug 25 electrically connected with the upper electrode 14and a second via plug 26 electrically connected with the second contactplug 20 are embedded in the second interlayer dielectric film 18.

More specifically, a first via hole 27 is formed above the upperelectrode 14. The first via hole 27 penetrates through the secondinterlayer dielectric film 18, further penetrates through the hydrogenbarrier film 17, and reaches an intermediate portion of the electrodeupper layer 16 of the upper electrode 14. A barrier metal film 28 isformed on the side surface of the first via hole 27 and a portion of theelectrode upper layer 16 facing the first via hole 27. The barrier metalfilm 28 is made of TiN, for example. The first via plug 25 is embeddedin the first via hole 27 through the barrier metal film 28. The firstvia plug 25 is made of W, for example.

A second via hole 29 is formed above the second contact plug 20. Thesecond via hole 29 penetrates through the second interlayer dielectricfilm 18, further penetrates through the hydrogen barrier film 17, andreaches the second contact plug 20. A barrier metal film 30 is formed onthe side surface of the second via hole 29 and a portion of the secondcontact plug 20 facing the second via hole 29. The barrier metal film 30is made of the same material as the barrier metal film 28. The secondvia plug 26 is embedded in the second via hole 29 through the barriermetal film 30. The second via plug 26 is made of the same material asthe first via plug 25.

A word line, a plate line and a bit line are connected to the gateelectrode 9, the first via plug 25 and the second via plug 26respectively. When a voltage is applied between the plate line and thebit line while the MOSFET 3 is turned on due to voltage application tothe word line, the ferroelectric film 13 of the ferroelectric capacitor4 causes spontaneous polarization. Thus, data is written, and held bymaintaining the polarization state. In order to read the data, a pulsevoltage is applied between the plate line and the bit line while theMOSFET 3 is turned on due to voltage application to the word line. Whenthe direction of polarization of the ferroelectric film 13 changes dueto the application of the pulse voltage, a current flows between theplate line and the bit line, and hence a logic signal “1” or “0” can beobtained in response to the presence or absence of the current.

FIGS. 2A to 2K are schematic sectional views successively showing thesteps of manufacturing the semiconductor device 1.

As shown in FIG. 2A, the MOSFET 3 (the drain region 5, the source region6, the gate insulating film 8, the gate electrode 9 and the sidewalls10), the first interlayer dielectric film 11, the first contact plug 19,the second contact plug 20, the first contact hole 21, the barrier metalfilm 22, the second contact hole 23 and the barrier metal film 24 areformed by well-known methods.

Thereafter a lower electrode material film 41 made of the material forthe lower electrode 12 of the ferroelectric capacitor 4 is formed on thefirst interlayer dielectric film 11 by sputtering, as shown in FIG. 2B.Further, a PZT film 42 made of PZT for forming the ferroelectric film 13is formed on the lower electrode material film 41 by MOCVD. The PZT film42 formed by MOCVD has large crystal grain sizes, and inferior surfacemorphology.

Then, a multilayer film 43 (an IrO₂ film, an Ir film and an IrTa alloyfilm) made of the material for the electrode lower layer 15 of the upperelectrode 14 is formed on the PZT film 42 by sputtering, as shown inFIG. 2C. The multilayer film 43 also has inferior surface morphology,due to the inferior surface morphology of the PZT film 42.

Then, a TiN film 44 made of TiN for forming the electrode upper layer 16of the upper electrode 14 is formed on the multilayer film 43 bysputtering, as shown in FIG. 2D. The TiN film 44 has inferior surfacemorphology immediately after the formation thereof, due to the inferiorsurface morphology of the multilayer film 43.

Thereafter the surface of the TiN film 44 is planarized by CMP(chemical-mechanical planarization), as shown in FIG. 2E. In the stepshown in FIG. 2D, the TiN film 44 is formed with a thickness (500 nm,for example) in consideration of film loss resulting from theplanarization.

After the planarization of the TiN film 44, the TiN film 44 is patternedinto the electrode upper layer 16 by photolithography and etching, asshown in FIG. 2F.

Then, portions of the multilayer film 43, the PZT film 42 and the lowerelectrode material film 41 exposed from the electrode upper layer 16 aresuccessively removed by etching through the electrode upper layer 16serving as a mask. At this time, the multilayer film 43, the PZT film 42and the lower electrode material film 41 are continuously etched byswitching reaction gas (etchant) at proper timing. Consequently, thelower electrode material film 41, the PZT film 42 and the multilayerfilm 43 are patterned into the lower electrode 12, the ferroelectricfilm 13 and the electrode lower layer 15 respectively, and theferroelectric capacitor 4 consisting of the lower electrode 12, theferroelectric film 13, the electrode lower layer 15 and the electrodeupper layer 16 is obtained, as shown in FIG. 2G.

Thereafter the hydrogen barrier film 17 is formed on the firstinterlayer dielectric film 11 and the ferroelectric capacitor 4 bysputtering, as shown in FIG. 2H. The upper surface of the electrodeupper layer 16 is planar, whereby the hydrogen barrier film 17 has agenerally uniform thickness on the electrode upper layer 16 (theferroelectric capacitor 4), and is formed with a planar upper surface.

Then, the second interlayer dielectric film 18 is formed on the hydrogenbarrier film 17 by CVD, as shown in FIG. 2I. The surface of theferroelectric capacitor 4 is covered with the hydrogen barrier film 17,whereby the ferroelectric film 13 can be prevented from hydrogenreduction, even if CVD employing H gas is used as the method of formingthe second interlayer dielectric film 18.

Then, the first via hole 27 and the second via hole 29 are formed in thesecond interlayer dielectric film 18 by photolithography and etching, asshown in FIG. 2J.

Thereafter a barrier metal material film 45 made of the material for thebarrier metal films 28 and 30 is formed on the second interlayerdielectric film 18 by sputtering, as shown in FIG. 2K. The barrier metalmaterial film 45 is formed also in the first via hole 27 and the secondvia hole 29. The upper surface of the electrode upper layer 16 isplanar, whereby the barrier metal material film 45 has a generallyuniform thickness on the electrode upper layer 16. Then, a depositionlayer 46 made of the material for the first via plug 25 and the secondvia plug 26 is stacked on the barrier metal material film 45 by CVD.Then, the deposition layer 46 and the barrier metal material layer 45are polished by CMP. The polishing is continued until unnecessaryportions of the barrier metal material layer 45 and the deposition layer46 formed outside the first via hole 27 and the second via hole 29 areremoved and the surfaces of the portions of the deposition layer 46 leftin the first via hole 27 and the second via hole 29 are flush with thesurface (the upper surface) of the second interlayer dielectric film 18.Consequently, the first via plug 25 embedded in the first via hole 27through the barrier metal film 28 and the second via plug 26 embedded inthe second via hole 29 through the barrier metal film 30 are formed, andthe semiconductor device 1 shown in FIG. 1 is obtained.

In the semiconductor device 1, as hereinabove described, the upperelectrode 14 having the multilayer structure of the electrode lowerlayer 15 in contact with the ferroelectric film 13 and the electrodeupper layer 16 stacked on the electrode lower layer 15 is stacked on theferroelectric film 13. The upper surface of the electrode upper layer 16is planarized into the planar surface independent of the surfacemorphology of the ferroelectric film 13. Therefore, the hydrogen barrierfilm 17 and the barrier metal film 28 (the barrier metal material film45) can be formed with generally uniform thicknesses on the electrodeupper layer 16, and defective coverage of the films 17 and 28 on theupper electrode 14 can be prevented.

Consequently, the hydrogen barrier film 17 can excellently prevent theferroelectric film 13 from hydrogen reduction, thereby preventingcharacteristic deterioration of the ferroelectric film 13. Further, thebarrier metal film 28 can excellently prevent metal diffusion from thefirst via plug 25 into the insulating film. Thus, the reliability of thesemiconductor device 1 can be improved, and the life thereof can beincreased.

When the deposition layer 46 is stacked by CVD, reaction between WF₆ gasand the material for the second interlayer dielectric film 18 can beprevented in the process of the deposition, due to the excellentcoverage of the barrier metal film 28. Consequently, the barrier metalfilms 28 and 30 can be prevented from peeling and corrosion.

Further, SiN employed as the material for the electrode upper layer 16has an etching selection ratio with respect to the materials (PZT andthe conductive material containing the noble metal such as Ir) for theferroelectric film 13 and the electrode lower layer 15, whereby theelectrode upper layer 16 can be utilized as an etching mask for formingthe ferroelectric film 13 and the electrode lower layer 15 after theformation of the electrode upper layer 16.

Also in the process of manufacturing the conventional semiconductordevice shown in FIG. 3, an etching mask is indispensable for forming theferroelectric film and the upper electrode (for patterning themultilayer film made of the materials for the ferroelectric film and theupper electrode). Therefore, an electrode having a planar upper surfacecan be obtained by simply adding the step of planarizing the film madeof the material for the electrode upper layer 16 to the manufacturingsteps for the conventional semiconductor device, by utilizing theelectrode upper layer 16 as the etching mask for forming theferroelectric film 13 and the electrode lower layer 15.

In order to planarize the upper surface of the upper electrode 14, theferroelectric film 13 or the electrode lower layer 15 may conceivably beplanarized. If the ferroelectric film 13 is planarized, however, badinfluence is exerted on the crystallinity thereof, to reduce theferroelectricity. The electrode lower layer 15 is made of the conductivematerial containing the noble metal such as Ir, and hence it isdifficult to planarize the electrode lower layer 15. The electrode upperlayer 16 is made of TiN, and hence the upper surface thereof can beeasily planarized.

When the first via hole 27 penetrates through the IrTa alloy filmforming a surface layer portion of the electrode lower layer 15, thehydrogen barrier properties by the IrTa alloy film may be damaged, andthe characteristics of the ferroelectric film 13 may be deteriorated dueto penetration of H from the first via hole 27. Therefore, the deepestportion of the first via hole 27 is arranged on the intermediate portionin the thickness direction of the electrode upper layer 16. Thus, thehydrogen barrier properties by the IrTa alloy film of the electrodelower layer 15 can be ensured, and the ferroelectric film 13 can beprevented from characteristic deterioration resulting from penetrationof H from the first via hole 27.

The material for the electrode lower layer 15 is not restricted to theconductive material containing Ir, but may be a conductive materialcontaining a noble metal (Au or Pt, for example) other than Ir.

The material for the electrode upper layer 16 is not restricted to TiN,but may simply be a conductive material such as TaN or WN, for example,having an etching selection ratio with respect to the ferroelectric film13 and the electrode lower layer 15.

The present invention may be embodied in other ways, and can be appliedto a ferroelectric memory having a 1T cell structure, for example.

While the present invention has been described in detail by way of theembodiments thereof, it should be understood that these embodiments aremerely illustrative of the technical principles of the present inventionbut not limitative of the invention. The spirit and scope of the presentinvention are to be limited only by the appended claims.

This application corresponds to Japanese Patent Application No.2008-248901 filed with the Japan Patent Office on Sep. 26, 2008, thedisclosure of which is incorporated herein by reference.

What is claimed is:
 1. A semiconductor device, comprising: aferroelectric film made of PZT by metal organic chemical vapordeposition; an electrode stacked on the ferroelectric film, theelectrode including a two-layer structure of an electrode lower layer incontact with the ferroelectric film and an electrode upper layer stackedon the electrode lower layer; and the electrode upper layer including aconductive material having TiN, an upper surface of the electrode upperlayer being planarized, and a lower surface of the electrode upper layernot being planarized; and a hydrogen barrier film covering the surfacesof the ferroelectric film and the electrode, the hydrogen barrier filmhaving a generally uniform thickness; wherein an upper surface of theelectrode lower layer has a morphology that is based on a morphology ofan upper surface of the ferroelectric film; wherein the upper surface ofthe ferroelectric film and the upper surface of the electrode lowerlayer have a rough shape based on the morphology of the ferroelectricfilm; wherein the upper surface of the electrode upper layer is smootherthan the upper surface of the ferroelectric film and the upper surfaceof the electrode lower layer; and wherein a flatness A of the uppersurface of the electrode upper layer, a flatness B of the upper surfaceof the electrode lower layer, and a flatness C of the upper surface ofthe ferroelectric film satisfy the following:Flatness A>Flatness C>Flatness B.
 2. The semiconductor device accordingto claim 1, wherein the electrode upper layer is made of titaniumnitride, tantalum nitride or tungsten nitride.
 3. The semiconductordevice according to claim 1, further comprising: an insulating filmstacked on the hydrogen barrier film; and a plug, made of a metallicmaterial, embedded in a via hole penetrating through the insulating filmand the hydrogen barrier film.
 4. The semiconductor device according toclaim 3, wherein the deepest portion of the via hole is arranged on anintermediate portion in the thickness direction of the electrode upperlayer.
 5. The semiconductor device according to claim 3, furthercomprising a barrier metal film interposed between the inner surface ofthe via hole and the plug.
 6. The semiconductor device according toclaim 5, wherein the plug is made of tungsten.
 7. The semiconductordevice according to claim 1, further comprising a lower electrodeopposed to the electrode through the ferroelectric film.
 8. Thesemiconductor device according to claim 1, wherein the upper surface ofthe electrode upper layer is planarized by CMP (chemical-mechanicalplanarization).
 9. The semiconductor device according to claim 1,wherein: the electrode lower layer includes a conductive material havingIrO₂ and Ir; and the Ir is stacked on the IrO₂.
 10. A semiconductordevice, comprising: a ferroelectric film including PZT; an electrodestacked on the ferroelectric film, the electrode including a two-layerstructure of an electrode lower layer in contact with the ferroelectricfilm and an electrode upper layer stacked on the electrode lower layer;and the electrode upper layer including a conductive material havingTiN, an upper surface of the electrode upper layer being planarized anda lower surface of the electrode upper layer not being planarized; and ahydrogen barrier film covering the surfaces of the ferroelectric filmand the electrode, the hydrogen barrier film having a generally uniformthickness; wherein an upper surface of the electrode lower layer has amorphology that is based on a morphology of an upper surface of theferroelectric film; wherein the upper surface of the ferroelectric filmand the upper surface of the electrode lower layer have a rough shapebased on the morphology of the ferroelectric film; wherein the uppersurface of the electrode upper layer is smoother than the upper surfaceof the ferroelectric film and the upper surface of the electrode lowerlayer; and wherein a flatness A of the upper surface of the electrodeupper layer, a flatness B of the upper surface of the electrode lowerlayer, and a flatness C of the upper surface of the ferroelectric filmsatisfy the following:Flatness A>Flatness C>Flatness B.
 11. The semiconductor device accordingto claim 10, wherein the thickness of the ferroelectric film is not morethan 100 nm.
 12. The semiconductor device according to claim 10, whereinthe electrode upper layer is made of titanium nitride, tantalum nitrideor tungsten nitride.
 13. The semiconductor device according to claim 10,further comprising: an insulating film stacked on the hydrogen barrierfilm; and a plug, made of a metallic material, embedded in a via holepenetrating through the insulating film and the hydrogen barrier film.14. The semiconductor device according to claim 13, wherein the deepestportion of the via hole is arranged on an intermediate portion in thethickness direction of the electrode upper layer.
 15. The semiconductordevice according to claim 13, further comprising a barrier metal filminterposed between the inner surface of the via hole and the plug. 16.The semiconductor device according to claim 15, wherein the plug is madeof tungsten.
 17. The semiconductor device according to claim 10, furthercomprising a lower electrode opposed to the electrode through theferroelectric film.
 18. The semiconductor device according to claim 10,wherein: the electrode lower layer includes a conductive material havingIrO₂ and Ir; and the Ir is stacked on the IrO₂.
 19. A semiconductordevice, comprising: a ferroelectric film; an electrode stacked on theferroelectric film, the electrode including a two-layer structure of anelectrode lower layer in contact with the ferroelectric film and anelectrode upper layer stacked on the electrode lower layer; and theelectrode upper layer including a conductive material having TiN, anupper surface of the electrode upper layer being planarized, and a lowersurface of the electrode upper layer not being planarized; and ahydrogen barrier film covering the surfaces of the ferroelectric filmand the electrode, the hydrogen barrier film having a generally uniformthickness; wherein an upper surface of the electrode lower layer has amorphology that is based on a morphology of an upper surface of theferroelectric film; wherein the upper surface of the ferroelectric filmand the upper surface of the electrode lower layer have a rough shapebased on the morphology of the ferroelectric film; wherein the uppersurface of the electrode upper layer is smoother than the upper surfaceof the ferroelectric film and the upper surface of the electrode lowerlayer; and wherein a flatness A of the upper surface of the electrodeupper layer, a flatness B of the upper surface of the electrode lowerlayer, and a flatness C of the upper surface of the ferroelectric filmsatisfy the following:Flatness A>Flatness C>Flatness B.
 20. The semiconductor device accordingto claim 19, further comprising a bottom electrode including a layerhaving Ir, wherein: the ferroelectric film is stacked on the layerhaving Ir; and a surface of the layer having Ir has a morphology that issuperior to that of the ferroelectric film.
 21. The semiconductor deviceaccording to claim 19, wherein: the electrode lower layer includes aconductive material having IrO₂ and Ir; and the Ir is stacked on theIrO₂.
 22. A semiconductor device, comprising: a ferroelectric film; anelectrode stacked on the ferroelectric film, the electrode including atwo-layer structure of an electrode lower layer in contact with theferroelectric film and an electrode upper layer stacked on the electrodelower layer; and the electrode upper layer including a conductivematerial having TiN; and a hydrogen barrier film covering the surfacesof the ferroelectric film and the electrode, the hydrogen barrier filmhaving a generally uniform thickness; wherein an upper surface of theelectrode lower layer has a morphology that is based on a morphology ofan upper surface of the ferroelectric film; wherein the upper surface ofthe ferroelectric film and the upper surface of the electrode lowerlayer have a rough shape based on the morphology of the ferroelectricfilm; wherein the upper surface of the electrode upper layer is smootherthan the upper surface of the ferroelectric film and the upper surfaceof the electrode lower layer; and wherein a flatness A of the uppersurface of the electrode upper layer, a flatness B of the upper surfaceof the electrode lower layer, and a flatness C of the upper surface ofthe ferroelectric film satisfy the following:Flatness A>Flatness C>Flatness B.
 23. The semiconductor device accordingto claim 22, further comprising a bottom electrode including a layerhaving Ir, wherein: the ferroelectric film is stacked on the layerhaving Ir; and a surface of the layer having Ir has a morphology that issuperior to that of the ferroelectric film.
 24. The semiconductor deviceaccording to claim 22, wherein: the electrode lower layer includes aconductive material having IrO₂ and Ir; and the Ir is stacked on theIrO₂.